Lattice thermal conductivity of TiZrHfNiSn half-Heusler alloys calculated from first principles: Key role of nature of phonon modes
arXiv:1611.01757 · doi:10.1103/PhysRevB.95.045202
Abstract
In spite of their relatively high lattice thermal conductivity , the XNiSn (X=Ti, Zr or Hf) half-Heusler compounds are good thermoelectric materials. Previous studies have shown that can be reduced by sublattice-alloying on the X-site. To cast light on how the alloy composition affects , we study this system using the phonon Boltzmann-transport equation within the relaxation time approximation in conjunction with density functional theory.The effect of alloying through mass-disorder scattering is explored using the virtual crystal approximation to screen the entire ternary TiZrHfNiSn phase diagram. The lowest lattice thermal conductivity is found for the TiHfNiSn compositions; in particular, there is a shallow minimum centered at TiHfNiSn with taking values between 3.2 and 4.1 W/mK when the Ti content varies between 20 and 80\%. Interestingly, the overall behavior of mass-disorder scattering in this system can only be understood from a combination of the nature of the phonon modes and the magnitude of the mass variance. Mass-disorder scattering is not effective at scattering acoustic phonons of low energy. By using a simple model of grain boundary scattering, we find that nanostructuring these compounds can scatter such phonons effectively and thus further reduce the lattice thermal conductivity; for instance, TiHfNiSn with a grain size of nm experiences a 42\% reduction of compared to that of the single crystal.
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Cited by in corpus (3)
- Characterization of rattling in relation to thermal conductivity: ordered half-Heusler semiconductors
- Uncertainty quantification in first-principles predictions of phonon properties and lattice thermal conductivity
- Discarded gems: Thermoelectric performance of materials with band gap emerging at the hybrid-functional level