Direct determination of zero-field splitting for single Co${}^{2+}$ ion embedded in a CdTe/ZnTe quantum dot

Abstract

When Co${}^{2+}$ impurity is embedded in semiconductor structure, crystal strain strongly influences zero-filed splitting between Co${}^{2+}$ states with spin projection $S_z=\pm 3/2$ and $S_z=\pm 1/2$. Experimental evidences of this effect have been given in previous studies, however direct measurement of the strain induced zero-field splitting has been inaccessible so far. Here this splitting is determined thanks to magneto-optical studies of individual Co${}^{2+}$ ion in epitaxial CdTe quantum dot in ZnTe barrier. Using partially allowed optical transitions we measure strain induced zero-field splitting of Co${}^{2+}$ ion directly on excitonic photoluminescence spectrum. Moreover, by observation of anticrossing of $S_z=+3/2$ and $S_z=-1/2$ Co${}^{2+}$ spin states in magnetic field, we determine axial and in-plane components of crystal field acting on Co${}^{2+}$. Proposed technique can be applied for optical determination of zero-field splitting of other transition metal ions in quantum dots.

7 pages, 1 table, 5 figures

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