Detailed optical spectroscopy of the hybridization gap and the hidden order transition in high quality URuSi single crystals
arXiv:1610.04356 · doi:10.1103/PhysRevB.94.235101
Abstract
We present a detailed temperature and frequency dependence of the optical conductivity measured on clean high quality single crystals of URuSi of - and -plane surfaces. Our data demonstrate the itinerant character of the narrow 5f bands, becoming progressively coherent as temperature is lowered below a cross-over temperature . is higher than in previous reports as a result of a different sample preparation, which minimizes residual strain. We furthermore present the density-response (energy-loss) function of this compound, and determine the energies of the heavy fermion plasmons with -and -axis polarization. Our observation of a suppression of optical conductivity below 50~meV both along and -axis, along with a heavy fermion plasmon at 18~meV, points toward the emergence of a band of coherent charge carriers crossing the Fermi energy and the emergence of a hybridization gap on part of the Fermi surface. The evolution towards coherent itinerant states is accelerated below the hidden order temperature ~K. In the hidden order phase the low frequency optical conductivity shows a single gap at meV, which closes at .
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Cited by in corpus (4)
- Hidden order and beyond: an experimental-theoretical overview of the multifaceted behavior of URuSi
- Electronic properties of a heavy-fermion U(Ru0.92Rh0.08)2Si2 single crystal
- Origin of gap-like behaviors in URuSi: Combined study via quasiparticle scattering spectroscopy and resistivity measurements
- Quasiparticle Relaxation Dynamics in URuFeSi Single Crystals