Spin-polarized quantum transport properties through flexible phosphorene

Abstract

We report a first-principles study on the tunnel magnetoresistance (TMR) and spin-injection efficiency (SIE) through phosphorene with nickel electrodes under the mechanical tension and bending on the phosphorene region. Both the TMR and SIE are largely improved under these mechanical deformations. For the uniaxial tension (${\epsilon }_y$) varying from 0 to 15\% applied along the armchair transport ({\it y}-)direction of the phosphorene, the TMR ratio is enhanced with a maximum of 107\% at the ${\epsilon }_y=10\%$, while the SIE increases monotonously from 8\% up to 43\% with the increasing of the strain. Under the out-of-plane bending, the TMR overall increases from 7\% to 50\% within the bending ratio of 0-3.9\%, and meanwhile the SIE is largely improved to around 70\%, as compared to that (30\%) of the flat phosphorene. Such behaviors of the TMR and SIE are mainly affected by the transmission of spin-up electrons in the parallel configuration, which is highly depended on the applied mechanical tension and bending. Our results indicate that the phosphorene based tunnel junctions have promising applications in flexible electronics.

5 pages, 6 figures

References in corpus (6)

• Control of graphene's properties by reversible hydrogenation
• Strain-Engineering Anisotropic Electrical Conductance of Phosphorene and Few-Layer Black Phosphorus
• Superior mechanical flexibility of phosphorene and few-layer black phosphorus
• Strain engineered direct-indirect band gap transition and its mechanism in 2D phosphorene
• Electrical contacts to monolayer black Phosphorus: a first principles investigation
• Direct tunneling through high-$\kappa$ amorphous HfO${}_2$: effects of chemical modification