Interlayer electronic transport in CaMnBi antiferromagnet
arXiv:1609.04003 · doi:10.1103/PhysRevB.94.125118
Abstract
We report interlayer electronic transport in CaMnBi single crystals. Quantum oscillations and angular magnetoresistance suggest coherent electronic conduction and valley polarized conduction of Dirac states. Small cyclotron mass, large mobility of carriers and nontrivial Berry's phase are consistent with the presence of Dirac fermions on the side wall of the warped cylindrical Fermi surface. Similar to SrMnBi that features an anisotropic Dirac cone, our results suggest that magnetic field-induced changes in the interlayer conduction are also present in layered bismuth-based materials with zero-energy line in momentum space created by the staggered alkaline earth atoms.
6 pages, 5 figures
References in corpus (4)
- Anisotropy in the electrical resistivity and susceptibility of superconducting BaFeAs single crystals
- Electron and hole Dirac cone states in-pairs in Ba(FeAs) confirmed by magnetoresistance
- Thermodynamic evidence for valley-dependent density of states in bulk bismuth
- Large magnetothermopower effect in Dirac materials (Sr/Ca)MnBi2