Interlayer electronic transport in CaMnBi antiferromagnet
arXiv:1609.04003 · doi:10.1103/PhysRevB.94.125118
Abstract
We report interlayer electronic transport in CaMnBi single crystals. Quantum oscillations and angular magnetoresistance suggest coherent electronic conduction and valley polarized conduction of Dirac states. Small cyclotron mass, large mobility of carriers and nontrivial Berry's phase are consistent with the presence of Dirac fermions on the side wall of the warped cylindrical Fermi surface. Similar to SrMnBi that features an anisotropic Dirac cone, our results suggest that magnetic field-induced changes in the interlayer conduction are also present in layered bismuth-based materials with zero-energy line in momentum space created by the staggered alkaline earth atoms.
6 pages, 5 figures
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- Design strong anomalous Hall effect via spin canting in antiferromagnetic nodal line materials
- Magnetotransport studies of the Sb square-net compound LaAgSb under high pressure and rotating magnetic fields
- Massive Dirac fermions in layered BaZnBi
- Coupling of magnetism and Dirac fermions in YbMnSb2