Photo-electrons unveil topological transitions in graphene-like systems

Abstract

The topological structure of the wavefunctions of particles in periodic potentials is characterized by the Berry curvature ${\Omega }_{kn}$ whose integral on the Brillouin zone is a topological invariant known as the Chern number. The bulk-boundary correspondence states that these numbers define the number of edge or surface topologically protected states. It is then of primary interest to find experimental techniques able to measure the Berry curvature. However, up to now, there are no spectroscopic experiments that proved to be capable to obtain information on ${\Omega }_{kn}$ to distinguish different topological structures of the $bulk$ wavefunctions of semiconducting materials. Based on experimental results of the dipolar matrix elements for graphene, here we show that ARPES experiments with the appropriate x-ray energies and polarization can unambiguously detect changes of the Chern numbers in dynamically driven graphene and graphene-like materials opening new routes towards the experimental study of topological properties of condensed matter systems.

References in corpus (29)

• Topological Insulators
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Berry Phase Effects on Electronic Properties
• A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
• Floquet Topological Insulator in Semiconductor Quantum Wells
• Topological Insulator Materials
• Photovoltaic Hall effect in graphene
• Observation of Floquet-Bloch states on the surface of a topological insulator
• Topological characterization of periodically-driven quantum systems
• Wave-packet dynamics in slowly perturbed crystals: Gradient corrections and Berry-phase effects
• Dirac materials
• Creating, moving and merging Dirac points with a Fermi gas in a tunable honeycomb lattice
• Driven quantum transport on the nanoscale
• Topological Insulator and Helical Zero Mode in Silicene under Inhomogeneous Electric Field
• Photo-Induced Topological Phase Transition and a Single Dirac-Cone State in Silicene
• Monolayer Topological Insulators: Silicene, Germanene and Stanene
• Selective scattering between Floquet-Bloch and Volkov states in a topological insulator
• Irradiated graphene as a tunable Floquet topological insulator
• Floquet chiral edge states in graphene
• Berry phase, hyperorbits, and the Hofstadter spectrum
• Theory of pump-probe photoemission in graphene: Ultrafast tuning of Floquet bands and local pseudospin textures
• An Aharonov-Bohm interferometer for determining Bloch band topology
• Multiterminal Conductance of a Floquet Topological Insulator
• Dynamical preparation of Floquet Chern insulators
• Hierarchy of Floquet gaps and edge states for driven honeycomb lattices
• Terahertz radiation driven chiral edge currents in graphene
• Control of electronic transport in graphene by electromagnetic dressing
• One-step theory of pump-probe photoemission
• Tight-binding approach to understand photoelectron intensity from graphene for circularly polarized light

Cited by in corpus (8)

• Strongly enhanced Berry dipole at topological phase transitions in BiTeI
• Low-frequency phase diagram of irradiated graphene and periodically driven spin-1/2 $XY$ chain
• Detecting light-induced Floquet band gaps of graphene via trARPES
• Floquet Spectrum and Two-Terminal Conductance of a Transition Metal Dichalcogenide Ribbon under a Circularly Polarized Laser Field
• Anomalous Goos-Hänchen shift in the Floquet scattering of Dirac fermions
• Floquet topological transition by unpolarized light
• Topological phase-diagram of time-periodically rippled zigzag graphene nanoribbons
• Sliding-induced topological transitions in bilayer biphenylene