Trapping Centers at the Superfluid-Mott-insulator Criticality: Transition between Charge-quantized States

Abstract

Under the conditions of superfluid-Mott-insulator criticality in two dimensions, the trapping centers--i.e., local potential wells and bumps--are generically characterized by an integer charge corresponding to the number of trapped particles (if positive) or holes (if negative). Varying the strength of the center leads to a transition between two competing ground states with charges differing by $\pm 1$. The hallmark of the transition scenario is a splitting of the number density distortion, $\delta n(r)$, into a half-integer core and a large halo carrying the complementary charge of $\pm 1/2$. The sign of the halo changes across the transition and the radius of the halo, $r_0$, diverges on the approach to the critical strength of the center, $V=V_c$, by the law $r_0\propto |V-V_c{|}^{-\tilde{\nu }}$, with $\tilde{\nu }\approx 2.33(5)$.

arXiv comment5 pages, 5 figures

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Cited by in corpus (7)

• Finite-size Scaling of O($n$) Systems at the Upper Critical Dimensionality
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• Critical behavior of an impurity at the boson superfluid-Mott insulator transition
• The halon: a quasiparticle featuring critical charge fractionalization
• Graphical Representations and Worm Algorithms for the O($N$) Spin Model
• Quantized Magnetic Flux and the Magneto-halon Effect in a Critical Superconductor
• Even-Odd effect of an Spin-S impurity coupled to a quantum critical system