Strain-controlled spin splitting in the conduction band of monolayer WS2
arXiv:1607.07566 · doi:10.1103/PhysRevB.94.115131
Abstract
Spin splitting bands that arises in conduction band minimum (CBM) of WS2 monolayer (ML) play an important role in the new spin-orbit phenomena such as spin-valley coupled electronics. However, application of strain strongly modifies electronic properties of the WS2 ML, which is expected to significantly affect to the properties of the spin splitting bands. Here, by using fully-relativistic first-principles calculations based on density-functional theory, we show that a substantial spin spliting bands observed in the CBM is effectively controlled and tuned by applying the biaxial strain. We also find that these spin splitting bands induce spin textures exhibiting fully out-of-plane spin polarization in the opposite direction between the K and Q points and their time reversals in the first Brillouin zone. Our study clarify that the strain plays an significant role in the spin-orbit coupling of the WS2 ML, which has very important implications in designing future spintronics devices.
4 Figures
References in corpus (7)
- Anomalous Lattice Vibrations of Single and Few-Layer MoS2
- k.p theory for two-dimensional transition metal dichalcogenide semiconductors
- Electrical Transport Properties of Single-Layer WS2
- High Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
- First-principles theory of field-effect doping in transition-metal dichalcogenides: Structural properties, electronic structure, Hall coefficient, and electrical conductivity
- Many-body and spin-orbit effects on direct-indirect band gap transition of strained monolayer MoS and WS
- Persistent spin helix on a wurtzite ZnO(10-10) surface: First-principles density-functional study
Cited by in corpus (5)
- Defect-induced large spin-orbit splitting in the monolayer of PtSe
- Electronic Structure of Exfoliated Millimeter-Sized Monolayer WSe2 on Silicon Wafer
- Reversible giant out-of-plane Rashba effect in two-dimensional Ga (= Se, Te; = Cl, Br, I) compounds for persistent spin helix
- Interlayer and intralayer excitons in AlN/WS heterostructure
- Reversible engineering the spin-orbit coupling of monolayer MoS2 via laser irradiation under controlled gas atmospheres