Flexocoupling impact on the kinetics of polarization reversal
arXiv:1607.05686 · doi:10.1103/PhysRevB.95.014104
Abstract
The impact of flexoelectric coupling on polarization reversal kinetics and space charge dynamics in thin films of ferroelectric-semiconductors has been theoretically studied. The relaxation-type Landau-Khalatnikov equation together with the Poisson equation and the theory of elasticity equations have been used to calculate in a self-consistent way the spatial-temporal development of ferroelectric polarization, electric potential and space charge, elastic stresses, strains and their gradients. The analysis of the obtained results reveals a moderate increase of the flexocoupling influence on the polarization, elastic strain, electric potential and space charge distribution dynamics with the decrease of a ferroelectric film thickness. In contrast, the dependence of polarization switching time on the applied electric field is strongly affected by the flexocoupling strength. The polarization reversal process consists typically of two stages, the first stage has no characteristic time, while the second one exhibits a switching time strongly dependent on the applied electric field.
arXiv comment29 pages, 6 figures, 4 Appendices
References in corpus (22)
- Strain gradient induced polarization in SrTiO3 single crystals
- A morphotropic phase boundary system based on polarization rotation and polarization extension
- First-principles theory and calculation of flexoelectricity
- Breaking of macroscopic centric symmetry in paraelectric phases of ferroelectric materials and implications for flexoelectricity
- First-principles theory of frozen-ion flexoelectricity
- Piezoelectric Response and Free Energy Instability in the Perovskite Crystals BaTiO3, PbTiO3 and Pb(Zr,Ti)O3
- Elastic effects of vacancies in strontium titanate: Short- and long-range strain fields, elastic dipole tensors, and chemical strain
- Flexoelectricity from density-functional perturbation theory
- Interfacial Polarization and Pyroelectricity in Antiferrodistortive Structures Induced by a Flexoelectric Effect and Rotostriction
- Understanding the origins of the intrinsic dead-layer effect in nanocapacitors
- Domain wall conduction in multiaxial ferroelectrics
- Conductivity of twin walls - surface junctions in ferroelastics: interplay of deformation potential, octahedral rotations, improper ferroelectricity and flexoelectric coupling
- Room temperature surface piezoelectricity in SrTiO3 ceramics via piezoresponse force microscopy
- Dynamic flexoelectric effect in perovskites from first principles calculations
- Unified ab initio formulation of flexoelectricity and strain-gradient elasticity
- Finite size and intrinsic field effect on the polar-active properties of the ferroelectric-semiconductor heterostructures
- Correlation Between Structure And C-Afm Contrast Of 180-Degree Domain Walls In Rhombohedral Bati03
- The influence of elastic strain gradient on the upper limit of flexocoupling strength, spatially-modulated phases and soft phonon dispersion in ferroics
- Impact of surface phenomena on direct bulk flexoelectric effect in finite samples
- Surface polar states and pyroelectricity in ferroelastics induced by flexo-roto field
- Flexocoupling impact on the size effects of piezo- response and conductance in mixed-type ferroelectrics-semiconductors under applied pressure
- Flexocoupling impact on the generalized susceptibility and soft phonon modes in the ordered phase of ferroics