Electron-hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator

Abstract

It is widely recognised that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high $T_{\mathrm{c}}$ cuprates. The doping effect, including the electron-hole doping asymmetry, may be more straightforward in doped organic Mott insulators owing to their simple electronic structures. Here we investigate the doping asymmetry of an organic Mott insulator by carrying out electric-double-layer transistor measurements and using cluster perturbation theory. The calculations predict that strongly anisotropic suppression of the spectral weight results in the Fermi arc state under hole doping, while a relatively uniform spectral weight results in the emergence of a non-interacting-like Fermi surface in the electron-doped state. In accordance with the calculations, the experimentally observed Hall coefficients and resistivity anisotropy correspond to the pocket formed by the Fermi arcs under hole doping and to the non-interacting Fermi surface under electron doping.

40 pages with 17 figures, accepted for publication in Nature Communications

References in corpus (7)

• Mott Transition from a Spin Liquid to a Fermi Liquid in the Spin-Frustrated Organic Conductor kappa-(ET)2Cu2(CN)3
• Variational cluster approach to correlated electron systems in low dimensions
• Mott Transition, Antiferromagnetism, and d-wave Superconductivity in Two-Dimensional Organic Conductors
• Variational cluster approach to spontaneous symmetry breaking: The itinerant antiferromagnet in two dimensions
• Strong electronic correlations in superconducting organic charge transfer salts
• Mott Transition in the Two-Dimensional Hubbard Model
• Field-induced carrier delocalization in the strain-induced Mott insulating state of an organic superconductor

Cited by in corpus (4)

• Anomalous Hall effect in $\kappa$-type organic antiferromagnets
• Two-dimensional ground-state mapping of a Mott-Hubbard system in a flexible field-effect device
• Critical Behavior in Doping-Driven Metal$-$Insulator Transition on Single-Crystalline Organic Mott-FET
• Simultaneous Control of Bandfilling and Bandwidth in Electric Double-Layer Transistor Based on Organic Mott Insulator $\kappa$-(BEDT-TTF)${}_2$Cu[N(CN)${}_2$]Cl