Spin- and valley-polarized transport across line defects in monolayer MoS2

Abstract

We address the ballistic transmission of charge carriers across ordered line defects in monolayer transition metal dichalcogenides. Our study reveals the presence of a transport gap driven by spin-orbit interactions, spin and valley filtering, both stemming from a simple picture of spin and momentum conservation, as well as the electron-hole asymmetry of charge-carrier transmission. Electronic transport properties of experimentally observed ordered line defects in monolayer MoS${}_2$, in particular, the vacancy lines and inversion domain boundaries, are further investigated using first-principles Green's function methodology. Our calculations demonstrate the possibility of achieving nearly complete spin polarization of charge carriers in nanoelectronic devices based on engineered periodic line defects in monolayer transition metal dichalcogenides, thus suggesting a practical scheme for all-electric control of spin transport.

arXiv comment6 pages, 4 figures

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Cited by in corpus (10)

• Defect-induced modification of low-lying excitons and valley selectivity in monolayer transition metal dichalcogenides
• Electronic and Optical Properties of Vacancy Defects in Transition Metal Dichalcogenides
• Illuminating Invisible Grain Boundaries in Coalesced Single-Orientation WS2 Monolayer Films
• Band Bending and Valence Band Quantization at Line Defects in MoS${}_2$
• Phase-Modulated Degenerate Parametric Amplification Microscopy
• Single-layer $1T^{\prime }$-MoS${}_2$ under electron irradiation from $ab$ $initio$ molecular dynamics
• Electrical valley filtering in transition metal dichalcogenides
• Realization of valley-spin polarized current via parametric pump in monolayer $\mathrm{Mo}{\mathrm{S}}_2$
• Band structures and ${\mathbb{Z}}_2$ invariants of two-dimensional transition metal dichalcogenide monolayers from fully-relativistic Dirac-Kohn-Sham theory using Gaussian-type orbitals
• Switchable valley functionalities of an $n-n^{-}-n$ junction in 2D semiconductors