Engineering polar discontinuities in honeycomb lattices
arXiv:1412.2471 · doi:10.1038/ncomms6157
Abstract
Unprecedented and fascinating phenomena have been recently observed at oxide interfaces between centrosymmetric cubic materials, such as LaAlO and SrTiO, where a polar discontinuity across the boundary gives rise to polarization charges and electric fields that drive a metal-insulator transition, with the appearance of free carriers at the interface. Two-dimensional analogues of these systems are possible, and honeycomb lattices could offer a fertile playground, thanks to their versatility and the extensive on-going experimental efforts in graphene and related materials. Here we suggest different realistic pathways to engineer polar discontinuities across interfaces between honeycomb lattices, and support these suggestions with extensive first-principles calculations. Two broad approaches are discussed, that are based on (i) nanoribbons, where a polar discontinuity against the vacuum emerges, and (ii) selective functionalizations, where covalent ligands are used to engineer polar discontinuities by selective or total functionalization of the parent system. All the cases considered have the potential to deliver innovative applications in ultra-thin and flexible solar-energy devices and in micro- and nano-electronics.
arXiv comment12+epsilon pages, 6 figures
References in corpus (31)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- Quantum Computation with Quantum Dots
- Wannier90: A Tool for Obtaining Maximally-Localised Wannier Functions
- Control of graphene's properties by reversible hydrogenation
- Maximally localized Wannier functions: Theory and applications
- Grains and grain boundaries in highly crystalline monolayer molybdenum disulfide
- Graphane: a two-dimensional hydrocarbon
- Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions
- Magnetic effects at the interface between nonmagnetic oxides
- Optoelectronics with electrically tunable PN diodes in a monolayer dichalcogenide
- Solar-energy conversion and light emission in an atomic monolayer p-n diode
- Fluorographene: Two Dimensional Counterpart of Teflon
- Thermal Contraction and Disordering of the Al(110) Surface
- Direct imaging of the coexistence of ferromagnetism and superconductivity at the LaAlO3/SrTiO3 interface
- Coexistence of Magnetic Order and Two-dimensional Superconductivity at LaAlO/SrTiO Interfaces
- Bulk Topological Invariants in Noninteracting Point Group Symmetric Insulators
- Boundary conditions for Dirac fermions on a terminated honeycomb lattice
- Mono- and Bilayer WS2 Light-Emitting Transistors
- Magnetic Boron Nitride Nanoribbons with Tunable Electronic Properties
- Spontaneous polarization and piezoelectricity in boron nitride nanotubes
- Dense network of one-dimensional mid-gap metallic modes in monolayer MoSe2 and their spatial undulations
- Experimentally Engineering the Edge Termination of Graphene Nanoribbons
- Origin of two-dimensional electron gases at oxide interfaces: insights from theory
- Origin of half-semimetallicity induced at interfaces of C-BN heterostructures
- Topological Classification of Crystalline Insulators with Point Group Symmetry
- Atomically perfect torn graphene edges and their reversible reconstruction
- Controlling the density of the 2DEG at the SrTiO3/LaAlO3 interface
- The third conformer of graphane: A first principles DFT based study
- Electrostatic stability of insulating surfaces: Theory and applications
- Electronic and Structural Analysis of a Stable Hydrogenated BN sheet (BHNH): A First Principles Based Approach
- One-dimensional half-metallic interfaces of two-dimensional honeycomb insulators
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- The Wannier Function Software Ecosystem for Materials Simulations
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