Synthesis, characterization and physical properties of layered bismuthide PtBi
arXiv:1605.08956 · doi:10.1103/PhysRevB.94.165119
Abstract
We report details of single crystal growth of stoichiometric bismuthide PtBi whose structure consists of alternate stacking of Pt layer sandwiched by Bi bilayer along the -axis. The compound crystallizes in space group P-3 with a hexagonal unit cell of ==6.553, =6.165. The magnetization data show opposite sign for fields parallel and perpendicular to the Pt layers, respectively. The -dependent resistivity is typical of a metal and the magnetic response shows clear two types of charge carriers and the validity of the semi-classical Kohler's rule. Its physical properties was discussed in comparison with recently proposed topological superconductor -PdBi.
5 pages, 5 figures