Synthesis, characterization and physical properties of layered bismuthide PtBi
arXiv:1605.08956 · doi:10.1103/PhysRevB.94.165119
Abstract
We report details of single crystal growth of stoichiometric bismuthide PtBi whose structure consists of alternate stacking of Pt layer sandwiched by Bi bilayer along the -axis. The compound crystallizes in space group P-3 with a hexagonal unit cell of ==6.553, =6.165. The magnetization data show opposite sign for fields parallel and perpendicular to the Pt layers, respectively. The -dependent resistivity is typical of a metal and the magnetic response shows clear two types of charge carriers and the validity of the semi-classical Kohler's rule. Its physical properties was discussed in comparison with recently proposed topological superconductor -PdBi.
5 pages, 5 figures
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Cited by in corpus (12)
- Polymorphic PtBi2: Growth, structure and superconducting properties
- Two-dimensional Topological Ferroelectric Metal with Giant Shift Current
- Fragility of Fermi arcs in Dirac semimetals
- Observation of Dirac surface states in the hexagonal PtBi2, a possible origin of the linear magnetoresistance
- Huge linear magnetoresistance due to open orbits in -PtBi
- Bulk and surface electronic structure of trigonal structured PtBi2 studied by angle-resolved photoemission spectroscopy
- Fermi Surface and Carriers Compensation of pyrite-type PtBi Revealed by Quantum Oscillations
- Enhanced weak superconductivity in trigonal -PtBi
- Investigation on high-order planar Hall effect in trigonal PtBi
- Low-temperature thermal expansion of the topological material candidates -PtBi and -BiPd
- Superconductivity in Bi based Bi2PdPt
- Quasi-linear magnetoresistance and paramagnetic singularity in Hypervalent Bismuthide