Viable route towards large-area two dimensional MoS2 using magnetron sputtering

Abstract

Structural, interfacial, optical, and transport properties of large-area MoS2 ultra-thin films on BN-buffered silicon substrates fabricated using magnetron sputtering are investigated. A relatively simple growth strategy is demonstrated here that simultaneously promotes superior interfacial and bulk MoS2 properties. Few layers of MoS2 are established using X-ray reflectivity, diffraction, ellipsometry, and Raman spectroscopy measurements. Layer-specific modeling of optical constants shows very good agreement with first-principles calculations. Conductivity measurements reveal that few-layer MoS2 films are more conducting than many-layer films. Photo-conductivity measurements reveal that the sputter deposited MoS2 films compare favorably with other large-area methods. Our work illustrates that sputtering is a viable route for large-area device applications using transition metal dichalcogenides.

arXiv comment19 pages including figures

References in corpus (6)

• The electronic properties of graphene
• Control of valley polarization in monolayer MoS2 by optical helicity
• Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
• Photocarrier relaxation in two-dimensional semiconductors
• Band nesting and the optical response of two-dimensional semiconducting transition metal dichalcogenides
• Broad Band Optical Properties of Large Area Monolayer CVD Molybdenum Disulfide

Cited by in corpus (1)

• Optical evidence of blue shift in topological insulator bismuth selenide in the few-layer limit