Pairing Mechanism of the Heavily Electron Doped FeSe Systems: Dynamical Tuning of the Pairing Cutoff Energy
arXiv:1605.01509 · doi:10.1088/1367-2630/18/11/113054
Abstract
We studied pairing mechanism of the heavily electron doped FeSe (HEDIS) systems, which commonly have one incipient hole band -- a band top below the Fermi level by a finite energy distance -- at point and ordinary electron bands at points in Brillouin zone (BZ). We found that the system allows two degenerate superconducting solutions with the exactly same in clean limit: the incipient -gap (, ) and -gap (, ) solutions with different pairing cutoffs, (spin fluctuation energy) and , respectively. The -gap solution, in which the system dynamically renormalizes the original pairing cutoff to (), therefore actively eliminates the incipient hole band from forming Cooper pairs, but without loss of , becomes immune to the impurity pair-breaking. As a result, the HEDIS systems, by dynamically tuning the pairing cutoff and selecting the -pairing state, can always achieve the maximum -- the of the degenerate solution in the ideal clean limit -- latent in the original pairing interactions, even in dirty limit.
12 pages, 11 figures; Appendix A is added
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