High resolution transient and permanent spectral hole burning in Ce${}^{3+}$:Y${}_2$SiO${}_5$ at liquid helium temperatures

Abstract

We perform hole burning with a low drift stabilized laser within the zero phonon line of the 4f-5d transition in Ce${}^{3+}$:Y${}_2$SiO${}_5$ at 2K. The narrowest spectral holes appear for small applied magnetic fields and are $6\pm 4$ MHz wide (FWHM). This puts an upper bound on the homogeneous linewidth of the transition to $3\pm 2$ MHz, which is close to lifetime limited. The spin level relaxation time is measured to $72\pm 21$ ms with a magnetic field of 10 mT. A slow permanent hole burning mechanism is observed. If the excitation frequency is not changed the fluorescence intensity is reduced by more than 50$\%$ after a couple of minutes of continuous excitation. The spectral hole created by the permanent hole burning has a width in the tens of MHz range, which indicates that a trapping mechanism occurs via the 5d-state.

References in corpus (3)

• Coherent properties of single rare-earth spin qubits
• Scalable designs for quantum computing with rare-earth-ion-doped crystals
• Production yield of rare-earth ions implanted into an optical crystal

Cited by in corpus (1)

• Cross-phase modulation of a probe stored in a waveguide for non-destructive detection of photonic qubits