Experimental evidence for hotspot and phase-slip mechanisms of voltage switching in ultra-thin YBa2Cu3O7-x nanowires

Abstract

We have fabricated ultra-thin YBa2Cu3O7-x nanowires with a high critical current density and studied their voltage switching behavior in the 4.2 - 90 K temperature range. A comparison of our experimental data with theoretical models indicates that, depending on the temperature and nanowire cross section, voltage switching originates from two different mechanisms: hotspot-assisted suppression of the edge barrier by the transport current and the appearance of phase-slip lines in the nanowire. Our observation of hotspot-assisted voltage switching is in good quantitative agreement with predictions based on the Aslamazov-Larkin model for an edge barrier in a wide superconducting bridge.

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Cited by in corpus (5)

• Energy-level quantization in YBa2Cu3O7-x phase-slip nanowires
• Fabrication and electrical transport characterization of high quality underdoped YBa${}_2$Cu${}_3$O${}_{7-\delta }$ nanowires
• Fast Dynamics of Vortices in Superconductors
• Nanowire bolometer using a 2D high-temperature superconductor
• Accessing Phase Slip Events in Nb Meander Wires