A combined method for synthesis of superconducting Cu doped Bi2Se3

Abstract

We present a two-step technique for the synthesis of superconducting CuxBi2Se3. Cu0.15Bi2Se3 single crystals were synthesized using the melt-growth method. Although these samples are non-superconducting, they can be employed to generate high quality superconducting samples if used as precursors in the following electrochemical synthesis step. Samples made from Cu0.15Bi2Se3 reliably exhibit zero-resistance even under the non-optimal quenching condition, while samples made from pristine Bi2Se3 require fine tuning of the quenching conditions to achieve similar performance. Moreover, under the optimal quenching condition, the average superconducting shielding fraction was still lower in the samples made from pristine Bi2Se3 than in the samples made from Cu0.15Bi2Se3. These results suggest that the pre-doped Cu atoms facilitate the formation of a superconducting percolation network. We also discuss the useful clues that we gathered about the locations of Cu dopants that are responsible for superconductivity.

arXiv comment13 pages, 3 figures

References in corpus (13)

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Cited by in corpus (7)

• Evidence of nodes in the order parameter of the superconducting doped topological insulator Nb${}_x$Bi${}_2$Se${}_3$ via penetration depth measurements
• Possible structural origin of superconductivity in Sr-doped Bi2Se3
• Tip-induced Superconductivity Coexisting with Preserved Topological Properties in Line-nodal Semimetal ZrSiS
• The Vertical Position of Sr Dopants in the Sr${}_x$Bi${}_2$Se${}_3$ Superconductor
• Superconducting properties of Cu intercalated Bi${}_2$Se${}_3$ studied by Muon Spin Spectroscopy
• Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy
• Sensitivity of superconducting states to the impurity location in layered materials