Electron-phonon heat exchange in layered nano-systems
arXiv:1508.05184 · doi:10.1016/j.ssc.2015.11.019
Abstract
We analyze the heat power between electrons and phonons in thin metallic films deposited on free-standing dielectric membranes in a temperature range in which the phonon gas has a quasi two-dimensional distribution. The quantization of the electrons wavenumbers in the direction perpendicular to the film surfaces lead to the formation of quasi two-dimensional electronic sub-bands. The electron-phonon coupling is treated in the deformation potential model and, if we denote by the electrons temperature and by the phonons temperature, we find that ; is the power "emitted" by the electron system to the phonons and is the power "absorbed" by the electrons from the phonons. Due to the quantization of the electronic states, vs and vs show very strong oscillations with , forming sharp crests almost parallel to the temperature axes. In the valleys between the crests, . From valley to crest, increases by more than one order of magnitude and on the crests does not have a simple power law dependence on temperature. The strong modulation of with the thickness of the film may provide a way to control the electron-phonon heat power and the power dissipation in thin metallic films. Eventually the same mechanism may be used to detect small variations of or surface contamination. On the other hand, the surface imperfections of the metallic films may make it difficult to observe the oscillations of with and eventually due to averaging the effects the heat flow would have a more smooth dependence on the thickness in real experiments.
18 pages, 17 figures
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