Optimal all-optical switching of a microcavity resonance in the telecom range using the electronic Kerr effect
arXiv:1508.02776 · doi:10.1364/OE.24.000239
Abstract
We have switched GaAs/AlAs and AlGaAs/AlAs planar microcavities that operate in the "Original" (O) telecom band by exploiting the instantaneous electronic Kerr effect. We observe that the resonance frequency reversibly shifts within one picosecond. We investigate experimentally and theoretically the role of several main parameters: the material backbone and its electronic bandgap, the pump power, the quality factor, and the duration of the switch pulse. The magnitude of the shift is reduced when the backbone of the central layer has a greater electronic bandgap; pumping with photon energies near the bandgap resonantly enhances the switched magnitude. Our model shows that the magnitude of the resonance frequency shift depends on the pump pulse duration and is maximized when the duration matches the cavity storage time that is set by the quality factor. We provide the settings for the essential parameters so that the frequency shift of the cavity resonance can be increased to one linewidth.
References in corpus (7)
- Spatial homogeneity of optically switched semiconductor photonic crystals and of bulk semiconductors
- Dynamical ultrafast all-optical switching of planar GaAs/AlAs photonic microcavities
- Photonic switching devices based on semiconductor nanostructures
- All-optical Switching of a Microcavity Repeated at Terahertz Rates
- Non-exponential spontaneous emission dynamics for emitters in a time-dependent optical cavity
- Identification of competing ultrafast all-optical switching mechanisms in Si woodpile photonic crystals
- Kerr and free-carrier ultrafast all-optical switching of GaAs/AlAs nanostructures near the three-photon edge of GaAs