Observation of a stronger-than-adiabatic change of light trapped in an ultrafast switched GaAs-AlAs microcavity
arXiv:0910.5000 · doi:10.1364/JOSAB.29.0000A1
Abstract
We study the time-resolved reflectivity spectrum of a switched planar GaAs-AlAs microcavity. Between 5 and 40 ps after the switching (pump) pulse we observe a strong excess probe reflectivity and a change of the frequency of light trapped in the cavity up to 5 linewidths away from the cavity resonance. This frequency change does not adiabatically follow the fast-changing cavity resonance. The frequency change is attributed to an accumulated phase change due to the time-dependent refractive index. An analytical model predicts dynamics in qualitative agreement with the experiments, and points to crucial parameters that control future applications.
Discussed effect of probe bandwidth. Included functional forms of n(z) and R(z)
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- Competition between electronic Kerr and free carrier effects in an ultimate-fast optically switched semiconductor microcavity
- Generation of ultrashort (~10ps) spontaneous emission pulses by quantum dots in a switched optical microcavity
- Optimal all-optical switching of a microcavity resonance in the telecom range using the electronic Kerr effect