A comprehensive analysis of the (R13xR13)R13.9° type II structure of silicene on Ag(111)
arXiv:1507.08884 · doi:10.1088/0953-8984/28/19/195002
Abstract
In this paper, using the same geometrical approach than for the (2R3x2R3) R30° structure (H. Jamgotchian et al., 2015, Journal of Physics. Condensed Matter 27 395002), for the (R13xR13)R13.9° type II structure, we propose an atomic model of the silicene layer based on a periodic relaxation of the strain epitaxy. This relaxation creates periodic arrangements of perfect areas of (R13xR13)R13.9° type II structure surrounded by defect areas. A detailed analysis of the main published experimental results, obtained by Scanning Tunneling Microscopy and by Low Energy Electron Diffraction, shows a good agreement with the geometrical model.
arXiv comment20 pages, 9 figures
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