Theory of nuclear spin dephasing and relaxation by optically illuminated nitrogen-vancy center
arXiv:1507.06385 · doi:10.1088/1367-2630/17/11/113041
Abstract
Dephasing and relaxation of the nuclear spins coupled to the nitrogen-vacancy (NV) center during optical initialization and readout is an important issue for various applications of this hybrid quantum register. Here we present both an analytical description and a numerical simulation for this process, which agree reasonably with the experimental measurements. For the NV center under cyclic optical transition, our analytical formula not only provide a clear physics picture, but also allows controlling the nuclear spin dissipation by tuning an external magnetic field. For more general optical pumping, our analytical formula reveals significant contribution to the nuclear spin dissipation due to electron random hopping into/out of the (or ) subspace. This contribution is not suppressed even under saturated optical pumping and/or vanishing magnetic field, thus providing a possible solution to the puzzling observation of nuclear spin dephasing in zero perpendicular magnetic field [M. V. G. Dutt \textit{et al}., Science \textbf{316}, 1312 (2007)]. It also implies that enhancing the degree of spin polarization of the nitrogen-vacancy center can reduce the effect of optical induced nuclear spin dissipation.
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- Scalable quantum register based on coupled electron spins in a room temperature solid
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Cited by in corpus (9)
- Single-Shot Readout of a Nuclear Spin Weakly Coupled to a Nitrogen-Vacancy Center
- Sensing individual nuclear spins with a single rare-earth electron spin
- Towards a quantum interface between spin waves and paramagnetic spin baths
- ODMR on Single TR12 Centers in Diamond
- Coherent Microwave Control of a Nuclear Spin Ensemble at Room Temperature
- Decoherence of Nitrogen Vacancy Centers in Diamond
- Breakdown signatures of the phenomenological Lindblad master equation in the strong optomechanical coupling regime
- An efficient cooling of the quantized vibration by a four-level configuration
- Silicon T centre hyperfine structure and memory protection schemes