The electronic structures of TiO2/Ti4O7, Ta2O5/TaO2 interfaces and the interfacial effects of dopants

Abstract

We study the electronic structures of TiO2/Ti4O7 and Ta2O5/TaO2 interfaces using the screened exchange (sX-LDA) functional. Both of these bilayer structures are useful infrastructures for high performance RRAMs. We find that the system Fermi energies of both interfaces are just above the conduction band edge of the corresponding stoichiometric oxides. According to the charge transition levels of the oxygen vacancies in Ta2O5 and TiO2, the oxygen vacancies are stabilized at the -2 charged state. We propose to introduce interfacial dopants to shift the system Fermi energies downward so that the +2 charged oxygen vacancy can be stable, which is important for the controlled switching under the electrical field. Several dipole models are presented to account for the ability of Fermi level shift due to the interfacial dopants.

References in corpus (5)

• Training and Operation of an Integrated Neuromorphic Network Based on Metal-Oxide Memristors
• Complementary Resistive Switching in Tantalum Oxide-Based Resistive Memory Devices
• Hidden Structural Order in Orthorhombic Tantalum Pentoxide (Ta${}_2$O${}_5$)
• First-principles DFT+GW study of oxygen vacancies in rutile TiO2
• DFT+U simulation of the Ti${}_4$O${}_7$-TiO${}_2$ interface

Cited by in corpus (1)

• The role of single oxygen or metal induced defect and correlated multiple defects in the formation of conducting filaments