Field-direction control of the type of charge carriers in nonsymmorphic IrO2

Abstract

In the quest for switching of the charge carrier type in conductive materials, we focus on nonsymmorphic crystals, which are expected to have highly anisotropic folded Fermi surfaces due to the symmetry requirements. Following simple tight-binding model simulation, we prepare nonsymmorphic IrO2 single-crystalline films with various growth orientations by molecular beam epitaxy, and systematically quantify their Hall effect for the corresponding field directions. The results clearly demonstrate that the dominant carrier type can be intrinsically controlled by the magnetic field direction, as also evidenced by first-principles calculations revealing nontrivial momentum dependence of the group velocity and mass tensor on the folded Fermi surfaces and its anisotropic nature for the field direction.

12 pages, 4 figures

References in corpus (2)

• BoltzTraP. A code for calculating band-structure dependent quantities
• Effect of spin orbit coupling and Hubbard $U$ on the electronic structure of IrO${}_2$

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• Effect of crystallinity on spin-orbit torque in 5$\text{d}$ iridium oxide IrO${}_2$
• Magneto-cubic and magneto-linear dependence observed in an in-plane anomalous Hall magnet
• Magnetic and electric properties of the metallic kagome antiferromagnet CrRhAs