Low wavenumber Raman spectroscopy of highly crystalline MoSe2 grown by chemical vapor deposition

Abstract

Transition metal dichalcogenides (TMDs) have recently attracted attention due to their interesting electronic and optical properties. Fabrication of these materials in a reliable and facile method is important for future applications, as are methods to characterize material quality. Here we present the chemical vapor deposition of MoSe2 monolayer and few layer crystals. These results show the practicality of using chemical vapor deposition to reliably fabricate these materials. Low frequency Raman spectra and mapping of shear and layer breathing modes of MoSe2 are presented for the first time. We correlate the behavior of these modes with layer number in the materials. The usefulness of low frequency Raman mapping to probe the symmetry, quality, and monolayer presence in CVD grown 2D materials is emphasized.

References in corpus (6)

• Two Dimensional Atomic Crystals
• Van der Waals heterostructures
• Helicity resolved Raman scattering of MoS2, MoSe2, WS2 and WSe2 atomic layers
• Photoluminescence of freestanding single- and few-layer MoS2
• Newly observed first-order resonant Raman modes in few-layer MoS${}_2$
• Heterojunction Hybrid Devices from Vapor Phase Grown MoS${}_2$

Cited by in corpus (2)

• Mapping of Low-Frequency Raman Modes in CVD-Grown Transition Metal Dichalcogenides: Layer Number, Stacking Orientation and Resonant Effects
• Ultralow-frequency collective compression mode and strong interlayer coupling in multilayer black phosphorus