Electronic structure of Mott-insulator CaCu3Ti4O12: Photoemission and inverse photoemission study
arXiv:1504.03798 · doi:10.1016/j.ssc.2015.05.007
Abstract
We have performed the photoemission and inverse photoemission experiments to elucidate the origin of Mott insulating states in A-site ordered perovskite CaCuTiO (CCTO). Experimental results have revealed that Cu 3-O 2 hybridized bands, which are located around the Fermi level in the prediction of the local-density approximation (LDA) band calculations, are actually separated into the upper Hubbard band at 1.5 eV and the lower Hubbard band at 1.7 eV with a band gap of 1.5-1.8 eV. We also observed that Cu 3 peak at 3.8 eV and Ti 3 peak at 3.8 eV are further away from each other than as indicated in the LDA calculations. In addition, it is found that the multiplet strucutre around 9 eV includes a considerable number of O 2 states. These observations indicate that the Cu 3 and Ti 3 electrons hybridized with the O 2 states are strongly correlated, which originates in the Mott-insulating states of CCTO.
arXiv comment11 pages, 3 figures
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