Valley entanglement of excitons in monolayers of transition-metal dichalcogenides

Abstract

We show that excitons and free carriers in K and K' valleys of transition metal dichalcogenide monolayers can be entangled with respect to their valley degree of freedom by absorbing linearly polarized single photons. This effect does not require any interaction between K and K' excitons in contrast to conventional mechanisms of entanglement that are mediated by coupling between quantum systems (e.g.~entanglement of photons in nonlinear optical interactions). The valley entanglement of excitons and free carriers can be verified by measuring the polarization of their photoluminescence or fluctuations of the photocurrent under an applied in-plane DC bias.

15 pages, 3 figures

References in corpus (4)

• The Valley Hall Effect in MoS2 Transistors
• Generation of entangled photons in graphene in a strong magnetic field
• Superradiant Decay of Cyclotron Resonance of Two-Dimensional Electron Gases
• The fluctuation-dissipation relation in a resonantly driven quantum medium

Cited by in corpus (9)

• Laser-driven parametric instability and generation of entangled photon-plasmon states in graphene and topological insulators
• Skew Scattering and Side Jump Drive Exciton Valley Hall Effect in Two-Dimensional Crystals
• Enhancement of the spontaneous emission in subwavelength quasi-two-dimensional waveguides and resonators
• Intrinsic edge excitons in two-dimensional MoS${}_2$
• Generation of entangled photons via parametric down-conversion in semiconductor lasers and integrated quantum photonic systems
• Laser-field detuning assisted optimization of exciton valley dynamics in monolayer WSe${}_2$: Geometric quantum speed limit
• Coulomb-induced synchronization of intersubband coherences in highly doped quantum wells and the formation of giant collective resonances
• Quantum dynamics of open many-qubit systems strongly coupled to a quantized electromagnetic field in dissipative cavities
• Intersubband electric dipole spin resonance in transition metal dichalcogenide heterobilayers