Electrical excitation of silicon-vacancy centers in single crystal diamond

Abstract

Electrically driven emission from negatively charged silicon-vacancy, (SiV)- centres in single crystal diamond is demonstrated. The SiV centres were generated using ion implantation into an intrinsic (i) region of a p-i-n single crystal diamond diode. Both electroluminescence and the photoluminescence signals exhibit the typical emission that is attributed to the (SiV)- centres. Under forward and reversed biased PL measurements, no signal from the neutral (SiV)0 defect could be observed. The realization of electrically driven (SiV)- emission is promising for scalable nanophotonics devices employing colour centres in single crystal diamond.

References in corpus (5)

• Photonic quantum technologies
• Indistinguishable photons from separated silicon-vacancy centers in diamond
• Ultra-low threshold, electrically pumped quantum dot photonic crystal nanocavity laser
• Diamond Nanophotonics
• Electronic transitions of single silicon vacancy centers in the near-infrared spectral region