Modulation and amplification of radiative far field heat transfer: Towards a simple radiative thermal transistor
arXiv:1502.06712 · doi:10.1063/1.4916730
Abstract
We show in this article that phase change materials (PCM) exhibiting a phase transition between a dielectric state and a metallic state are good candidates to perform modulation as well as amplification of radiative thermal flux. We propose a simple situation in plane parallel geometry where a so-called radiative thermal transistor could be achieved. In this configuration, we put a PCM between two blackbodies at different temperatures. We show that the transistor effect can be achieved easily when this material has its critical temperature between the two blackbody temperatures. We also see, that the more the material is reflective in the metallic state, the more switching effect is realized whereas the more PCM transition is stiff in temperature, the more thermal amplification is high. We finally take the example of VO2 that exhibits an insulator-metallic transition at 68{\textdegree}C. We show that a demonstrator of a radiative transistor could easily be achieved in view of the heat flux levels predicted. Far-field thermal radiation experiments are proposed to back the results presented.
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