DFT calculations of magnetic anisotropy energy for GeMnTe ferromagnetic semiconductor

Abstract

Density functional theory (DFT) calculations of the energy of magnetic anisotropy for diluted ferromagnetic semiconductor GeMnTe were performed using using OpenMX package with fully relativistic pseudopotentials. The influence of hole concentration and magnetic ion neighborhood on magnetic anisotropy energy is presented. Analysis of microscopic mechanism of magnetic anisotropy is provided, in particular the role of spin-orbit coupling, spin polarization and spatial changes of electron density are discussed. The calculations are in accordance with the experimental observation of perpendicular magnetic anisotropy in rhombohedral GeMnTe (111) thin layers.

arXiv comment11 pages, 8 figures

References in corpus (8)

• Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
• Dilute ferromagnetic semiconductors: Physics and spintronic structures
• Experimental probing of the interplay between ferromagnetism and localisation in (Ga,Mn)As
• Temperature Dependent Magnetic Anisotropy in (Ga,Mn)As Layers
• Temperature Dependent Magnetic Anisotropy in (Ga,Ma)As Layers
• Mechanism of uniaxial magnetocrystalline anisotropy in transition metal alloys
• Magnetic anisotropy of epitaxial (Ga,Mn)As on (113)A GaAs
• Ground state splitting of ^8S rare earth ions in semiconductors

Cited by in corpus (4)

• Magnetic anisotropy induced by crystal distortion in Ge1-xMn xTe/PbTe//KCl (001) ferromagnetic semiconductor layers
• Magnetic anisotropy energy in disordered Ge_{1-x}Mn_{x}Te
• Interlayer magnetic interactions and ferroelectricity in $\pi$/3-twisted CrX${}_2$ (X = Se, Te) bilayers
• Pair anisotropy in disordered magnetic systems