paper

Electrical and magnetic properties of LaRhSb filled skutterudite synthesized at high pressure

arXiv:1502.00337 · doi:10.1016/j.jallcom.2015.06.141

Abstract

A filled skutterudite, LaRhSb, with a lattice constant of 9.284(2) Å was synthesized using a high-pressure technique. The electrical resistivity showed semiconducting behavior and the energy gap was estimated to be more than 0.08 eV. Magnetic susceptibility measurements indicated temperature-independent diamagnetism, which originates from Larmor diamagnetism. The electrical properties of this compound are more similar to those of the LaRhAs semiconductor with an energy gap of 0.03 eV than to those of the LaRhP superconductor.

12 pages, 3 figures

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