378 citations · 932 across the 7 of their papers we have counts for
8 papers
Electron spin resonance driven photogalvanic effect in graphene-based structures
C. Bray, I. Yahniuk, L. E. Golub +13
We report an electron-spin-resonance-driven linear photogalvanic effect (LPGE) in unbiased monolayer graphene and WSe_2/graphene heterostructures. Under linearly polarized 45--75 G…
Terahertz ratchet in graphene 2D metamaterial formed by a patterned gate with an antidot arrayd
I. Yahniuk, M. Hild, L. E. Golub +8
We report the observation of the terahertz-induced ratchet effect in graphene-based two-dimensional (2D) metamaterials. The metamaterial consists of a graphite gate patterned with…
Effective Mass in Bilayer Graphene at Low Carrier Densities: the Role of Potential Disorder and Electron-Electron Interaction
J. Li, L. Z. Tan, K. Zou +6
In a two-dimensional electron gas, the electron-electron interaction generally becomes stronger at lower carrier densities and renormalizes the Fermi liquid parameters such as the…
WSe2 light-emitting tunneling transistors with enhanced brightness at room temperature
F. Withers, O. Del Pozo-Zamudio, S. Schwarz +15
Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for opto-electronic applications. In particular, van der Waals h…
Evidence for defect-mediated tunneling in hexagonal boron nitride-based junctions
U. Chandni, K. Watanabe, T. Taniguchi +1
We investigate tunneling in metal-insulator-metal junctions employing few atomic layers of hexagonal boron nitride (hBN) as the insulating barrier. While the low-bias tunnel resist…
Electrical and magnetic properties of LaRhSb filled skutterudite synthesized at high pressure
S. Ibuka, M. Imai, M. Miyakawa +1
A filled skutterudite, LaRhSb, with a lattice constant of 9.284(2) Å was synthesized using a high-pressure technique. The electrical resistivity showed semicondu…