Thermionic Emission and Negative dI/dV in Photoactive Graphene Heterostructures
arXiv:1501.06927 · doi:10.1021/nl502522q
Abstract
Transport in photoactive graphene heterostructures, originating from the dynamics of photogenerated hot carriers, is governed by the processes of thermionic emission, electron-lattice thermal imbalance and cooling. These processes give rise to interesting photoresponse effects, in particular negative differential resistance (NDR) arising in the hot-carrier regime. The NDR effect stems from a strong dependence of electron-lattice cooling on the carrier density, which results in the carrier temperature dropping precipitously upon increasing bias. The ON-OFF switching between the NDR regime and the conventional cold emission regime, as well as the gate-controlled closed-circuit current that is present at zero bias voltage, can serve as signatures of hot-carrier dominated transport.
8 pgs, 4 fgs
References in corpus (6)
- Universal Dynamic Conductivity and Quantized Visible Opacity of Suspended Graphene
- Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
- STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride
- Atomically thin boron nitride: a tunnelling barrier for graphene devices
- Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures
- Strong Coulomb drag and broken symmetry in double-layer graphene
Cited by in corpus (4)
- Hot carriers in graphene -- fundamentals and applications
- Effect of electron thermal conductivity on resonant plasmonic detection in the metal/black-AsP/graphene FET terahertz hot-electron bolometers
- Time-Domain Signatures of Distinct Correlated Insulators in a Moiré Superlattice
- Hot-electron resonant terahertz bolometric detection in the graphene/black-AsP field-effect transistors with a floating gate