Intense femtosecond photoexcitation of bulk and monolayer MoS2

Abstract

The effect of femtosecond laser irradiation on bulk and single-layer MoS2 on silicon oxide is studied. Optical, Field Emission Scanning Electron Microscopy (FESEM) and Raman microscopies were used to quantify the damage. The intensity of A1g and E2g1 vibrational modes was recorded as a function of the number of irradiation pulses. The observed behavior was attributed to laser-induced bond breaking and subsequent atoms removal due to electronic excitations. The single-pulse optical damage threshold was determined for the monolayer and bulk under 800nm and 1030nm pulsed laser irradiation and the role of two-photon versus one photon absorption effects is discussed.

14 pages, 4 figures, 24 references, PDF

References in corpus (4)

• The electronic properties of graphene
• Anomalous Lattice Vibrations of Single and Few-Layer MoS2
• Valley polarization in MoS2 monolayers by optical pumping
• Laser-thinning of MoS2: on demand generation of a single-layer semiconductor

Cited by in corpus (6)

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• Ultrafast Multi-Shot Ablation and Defect Generation in Monolayer Transition Metal Dichalcogenides
• Silicon nanoantennas for tailoring the optical properties of MoS2 monolayers
• Determining the complex second-order optical susceptibility in macroscale van der Waals heterobilayers