Transport Signatures of Fermi Surface Topology Change in BiTeI

Abstract

We report a quantum magnetotransport signature of a change in Fermi surface topology in the Rashba semiconductor BiTeI with systematic tuning of the Fermi level $E_F$. Beyond the quantum limit, we observe a marked increase/decrease in electrical resistivity when $E_F$ is above/below the Dirac node that we show originates from the Fermi surface topology. This effect represents a measurement of the electron distribution on the low-index ($n=0,-1$) Landau levels and is uniquely enabled by the finite bulk $k_z$ dispersion along the $c$-axis and strong Rashba spin-orbit coupling strength of the system. The Dirac node is independently identified by Shubnikov-de Haas oscillations as a vanishing Fermi surface cross section at $k_z=0$. Additionally we find that the violation of Kohler's rule allows a distinct insight into the temperature evolution of the observed quantum magnetoresistance effects.

12 pages, 4 figures

References in corpus (2)

• Room-Temperature Quantum Hall Effect in Graphene
• Topological Change of the Fermi Surface in Low Density Rashba Gases: Application to Superconductivity

Cited by in corpus (4)

• Observation of topological transition of Fermi surface from a spindle-torus to a torus in large bulk Rashba spin-split BiTeCl
• RKKY interaction in three-dimensional electron gases with linear spin-orbit coupling
• Interlayer RKKY Coupling in Bulk Rashba Semiconductors under Topological Phase Transition
• Thermoelectric and optical probes for a Fermi surface topology change in noncentrosymmetric metals