Combined study of microwave-power/linear-polarization dependence of the microwave-radiation-induced magnetoresistance oscillations in GaAs/AlGaAs devices

Abstract

We report the results of a combined microwave polarization-dependence and power-dependence study of the microwave-radiation-induced magnetoresistance oscillations in high mobility GaAs/AlGaAs heterostructure devices at liquid helium temperatures. The diagonal resistance was measured with the magnetic field fixed at the extrema of the radiation-induced magnetoresistance oscillations, as the microwave power was varied at a number of microwave polarization angles. The results indicate a nonlinear relation between the oscillatory peak or valley magnetoresistance and the microwave power, as well as a cosine square relation between the oscillatory peak or valley magnetoresistance and the microwave polarization angle. The main features are briefly compared with the predictions of existing models.

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Cited by in corpus (4)

• Comparative study of microwave radiation-induced magnetoresistive oscillations induced by circularly- and linearly- polarized photo-excitation
• Linear polarization study of microwave-radiation-induced magnetoresistance oscillations: Comparison of power dependence to theory
• Evolution of the linear-polarization-angle-dependence of the radiation-induced magnetoresistance-oscillations with microwave power
• Radiation-induced magnetoresistance oscillations with massive Dirac fermions