Physical Properties of Zener Tunnelling Nano-devices in Graphene
arXiv:1410.8016 · doi:10.1002/andp.201400147
Abstract
By considering the direction of charge carriers and the conservation of probablity current the transmission properties of graphene Zener tunnelling nano-devices were obtained. The scattering properties were then used with an adaptation of the Landauer formalism to calculate an analytical expression for current and conductance. The numerical results of the IV characteristics were then briefly discussed for the graphene step and Zener barrier. A comparison between the theoretical model and experimental results shows the similarities of graphene nanoribbons and infinite sheet graphene.
arXiv comment13 pages, 15 figures
References in corpus (16)
- The electronic properties of graphene
- Chiral tunneling and the Klein paradox in graphene
- Observation of Electron-Hole Puddles in Graphene Using a Scanning Single Electron Transistor
- Exceptional ballistic transport in epitaxial graphene nanoribbons
- Electron Transport in Disordered Graphene Nanoribbons
- Quantum dots in graphene
- Quantum dot behavior in graphene nanoconstrictions
- Smooth electron waveguides in graphene
- Chiral tunneling in single and bilayer graphene
- Zero-energy states in graphene quantum dots and rings
- Enhanced Performance in Epitaxial Graphene FETs with Optimized Channel Morphology
- The nature of localization in graphene under quantum Hall conditions
- Design of electron wave filters in monolayer graphene by tunable transmission gap
- Introduction to Graphene Electronics -- A New Era of Digital Transistors and Devices
- Searching for confined modes in graphene channels: the variable phase method
- Electronic fibre in graphene