Light-Matter Interaction and Lasing in Semiconductor Nanowires: A combined FDTD and Semiconductor Bloch Equation Approach

Abstract

We present a time-domain model for the simulation of light-matter interaction in semiconductors in arbitrary geometries and across a wide range of excitation conditions. The electromagnetic field is treated classically using the finite-difference time-domain method. The polarization and occupation numbers of the semiconductor material are described using the semiconductor Bloch equations including many-body effects in the screened Hartree-Fock approximation. Spontaneous emission noise is introduced using stochastic driving terms. As an application of the model, we present simulations of the dynamics of a nanowire laser including optical pumping, seeding by spontaneous emission and the selection of lasing modes.

7 pages, 6 figures

References in corpus (3)

• Numerical Study of Amplified Spontaneous Emission and Lasing in Random Media
• Polarization features of optically pumped CdS nanowire lasers
• Finite-difference time-domain formulation of stochastic noise in macroscopic atomic systems

Cited by in corpus (3)

• Self-consistent quantum-kinetic theory for interplay between pulsed-laser excitation and nonlinear carrier transport in a quantum-wire array
• Dynamical calculation of third harmonic generation in a semiconductor quantum well
• Semiclassical modeling of coupled quantum dot-cavity systems: From polariton-like dynamics to Rabi oscillations