Dynamical calculation of third harmonic generation in a semiconductor quantum well

Abstract

Non-linear phenomena in optically excited semiconductor structures are of high interest. We here develop a model capable of studying the dynamics of the photoexcited carriers, including Coulomb interaction on a Hartree-Fock level, on the same footing as the dynamics of the light field impinging on an arbitrary photonic structure. Applying this method to calculate the third harmonic generation in a semiconductor quantum well embedded in a Bragg mirror structure, we find that the power-law exponent of the intensity dependence of the third harmonic generation depends on the frequency of the exciting pulse. Off-resonant pulses follow the expected cubic dependence, while the exponent is smaller for resonant pulses due to saturation effects in the induced carrier density. Our study provides a detailed understanding of the carrier and light field dynamics during non-linear processes.

9 pages, 9 figures, submitted to Physical Review B

References in corpus (8)

• Overcoming losses with gain in a negative refractive index metamaterial
• Optical Third-Harmonic Generation in Graphene
• High harmonic generation in undoped graphene: Interplay of inter- and intraband dynamics
• Self-consistent calculations of loss compensated fishnet metamaterials
• Gain and plasmon dynamics in negative-index metamaterials
• Numerical study of the optical nonlinearity of doped and gapped graphene: From weak to strong field excitation
• Light-Matter Interaction and Lasing in Semiconductor Nanowires: A combined FDTD and Semiconductor Bloch Equation Approach
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Cited by in corpus (5)

• Suppressing spatio-temporal lasing instabilities with wave-chaotic microcavities
• Topical Review: optics of exciton-plasmon nanomaterials
• Efficient high-harmonic generation in graphene with two-color laser field at orthogonal polarization
• Semiclassical modeling of coupled quantum dot-cavity systems: From polariton-like dynamics to Rabi oscillations
• Coupled Mode Theory for Semiconductor Nanowires