Transport gap and hysteretic behavior of the Ising quantum Hall ferromagnets in Landau levels of bilayer graphene
arXiv:1410.4232 · doi:10.1103/PhysRevB.90.245410
Abstract
The chiral two-dimensional electron gas in Landau levels of a Bernal-stacked graphene bilayer has a valley-pseudospin Ising quantum Hall ferromagnetic behavior at odd filling factors of these fourfold degenerate states. At zero interlayer electrical bias, the ground state at these fillings is spin polarized and electrons occupy one valley or the other while a finite electrical bias produces a series of valley pseudospin-flip transitions. In this work, we extend the Ising behavior to chirally-stacked multilayer graphene and discuss the hysteretic behavior of the Ising quantum Hall ferromagnets. We compute the transport gap due to different excitations: bulk electron-hole pairs, electron-hole pairs confined to the coherent region of a valley-pseudospin domain wall, and spin or valley-pseudospin skyrmion-antiskyrmion pairs. We determine which of these excitations has the lowest energy at a given value of the Zeeman coupling, bias, and magnetic field.
arXiv comment18 pages with 9 eps figures
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- Spontaneous Layer Polarization and Conducting Domain Walls in the Quantum Hall Regime of Bilayer Graphene
- Quantum Hall ferromagnets and transport properties of buckled Dirac materials
- Phase transitions and topological properties of the 5/2 quantum Hall states with strong Landau-level mixing
- Skyrmionic Transport and First Order Phase Transitions in Twisted Bilayer Graphene Quantum Hall Ferromagnet