Modeling crosstalk and afterpulsing in silicon photomultipliers
arXiv:1409.4564 · doi:10.1016/j.nima.2014.11.080
Abstract
An experimental method to characterize the crosstalk and afterpulsing in silicon photomultipliers has been developed and applied to two detectors fabricated by Hamamatsu. An analytical model of optical crosstalk that we presented in a previous publication has been compared with new measurements, confirming our results. Progresses on a statistical model to describe afterpulsing and delayed crosstalk are also shown and compared with preliminary experimental data.
11 pages, 5 figures, New Developments in Photodetection, June 30th to July 4th, Tours, France
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