All-optical formation of coherent dark states of silicon-vacancy spins in diamond
arXiv:1409.4069 · doi:10.1103/PhysRevLett.113.263601
Abstract
Spin impurities in diamond can be versatile tools for a wide range of solid-state-based quantum technologies, but finding spin impurities which offer sufficient quality in both photonic and spin properties remains a challenge for this pursuit. The silicon-vacancy center has recently attracted a lot of interest due to its spin-accessible optical transitions and the quality of its optical spectrum. Complementing these properties, spin coherence is essential for the suitability of this center as a spin-photon quantum interface. Here, we report all-optical generation of coherent superpositions of spin states in the ground state of a negatively charged silicon-vacancy center using coherent population trapping. Our measurements reveal a characteristic spin coherence time, T2*, exceeding 250 nanoseconds at 4 K. We further investigate the role of phonon-mediated coupling between orbital states as a source of irreversible decoherence. Our results indicate the feasibility of all-optical coherent control of silicon-vacancy spins using ultrafast laser pulses.
Additional data and analysis is available for download in PDF format at the publications section of http://www.amop.phy.cam.ac.uk/amop-ma
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- Quantum many-body theory for electron spin decoherence in nanoscale nuclear spin baths
- Cavity quantum electrodynamics with color centers in diamond
- All-optical control of the silicon-vacancy spin in diamond at millikelvin temperatures
- Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN
- Coherent control of a strongly driven silicon vacancy optical transition in diamond
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- Simulation of topological phases with color center arrays in phononic crystals
- Dissipation-assisted preparation of steady spin-squeezed states of SiV centers
- Optical control protocols for high-fidelity spin rotations of single SiV and SnV centers in diamond
- Low-Temperature Spectroscopic Investigation of Lead-Vacancy Centers in Diamond Fabricated by High-Pressure and High-Temperature Treatment