Ground state phase diagram of the half-filled bilayer Hubbard model
arXiv:1409.1103 · doi:10.1103/PhysRevB.90.195131
Abstract
Employing a combination of functional renormalization group calculations and projective determinantal quantum Monte Carlo simulations, we examine the Hubbard model on the square lattice bilayer at half filling. From this combined analysis, we obtain a comprehensive account on the ground state phase diagram with respect to the extent of the system's metallic and (antiferromagnetically ordered) Mott-insulating as well as band-insulating regions. By means of an unbiased functional renormalization group approach, we exhibit the antiferromagnetic Mott-insulating state as the relevant instability of the free metallic state, induced by any weak finite onsite repulsion. Upon performing a careful analysis of the quantum Monte Carlo data, we resolve the difficulty of identifying this antiferromagnetic ground state for finite interlayer hopping in the weak-coupling regime, where nonmonotonous finite-size corrections are shown to relate to the two-sheeted Fermi surface structure of the metallic phase. On the other hand, quantum Monte Carlo simulations are well suited to identify the transition between the Mott-insulating phase and the band insulator in the intermediate-to-strong coupling regime. Here, we compare our numerical findings to indications for the transition region obtained from the functional renormalization group procedure.
12 pages, 15 figures
References in corpus (8)
- Density waves and Cooper pairing on the honeycomb lattice
- Antiferromagnetically Driven Electronic Correlation in Iron Pnictides and Cuprates
- Band insulator to Mott insulator transition in a bilayer Hubbard model
- Magnetic and Transport Properties of a Coupled Hubbard Bilayer with Electron and Hole Doping
- Current Carrying Ground State in a Bi-layer Model
- Uniform Mixing of Antiferromagnetism and High-Tc Superconductivity in Electron-doped Layers in Four-layered Ba2Ca3Cu4O8F2 : A New Phenomenon in an Electron Underdoped RegimePhenomenon in an Electron Underdoped Regime
- Functional renormalization group for commensurate antiferromagnets: Beyond the mean-field picture
- Magnetic transition in a correlated band insulator
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