Magnetic and Transport Properties of a Coupled Hubbard Bilayer with Electron and Hole Doping

Abstract

The single band, two dimensional Hubbard Hamiltonian has been extensively studied as a model for high temperature superconductivity. While Quantum Monte Carlo simulations within the dynamic cluster approximation are now providing considerable evidence for a d-wave superconducting state at low temperature, such a transition remains well out of reach of finite lattice simulations because of the "sign problem". We show here that a bilayer Hubbard model, in which one layer is electron doped and one layer is hole doped, can be studied to lower temperatures and exhibits an interesting signal of d-wave pairing. The results of our simulations bear resemblance to a recent report on the magnetic and superconducting properties of Ba${}_2$Ca${}_3$Cu${}_4$O${}_8$F${}_2$ which contains both electron and hole doped CuO${}_2$ planes. We also explore the phase diagram of bilayer models in which each sheet is at half-filling.

References in corpus (3)

• Does Simple Two-Dimensional Hubbard Model Account for High-Tc Superconductivity in Copper Oxides?
• Band insulator to Mott insulator transition in a bilayer Hubbard model
• Uniform Mixing of Antiferromagnetism and High-Tc Superconductivity in Electron-doped Layers in Four-layered Ba2Ca3Cu4O8F2 : A New Phenomenon in an Electron Underdoped RegimePhenomenon in an Electron Underdoped Regime

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