High Intrinsic Mobility and Ultrafast Carrier Dynamics in Multilayer Metal Dichalcogenide MoS2

Abstract

The ultimate limitations on carrier mobilities in metal dichalcogenides, and the dynamics associated with carrier relaxation, are unclear. We present measurements of the frequency-dependent conductivity of multilayer dichalcogenide MoS2 by optical-pump terahertz-probe spectroscopy. We find mobilities in this material approaching 4200 cm2/Vs at low temperatures. The temperature dependence of scattering indicates that the mobility, an order of magnitude larger than previously reported for MoS2, is intrinsically limited by acoustic phonon scattering at THz frequencies. Our measurements of carrier relaxation reveal picosecond cooling times followed by recombination lasting tens of nanoseconds and dominated by Auger scattering into defects. Our results provide a useful context in which to understand and evaluate the performance of MoS2-based electronic and optoelectronic devices.

13 pages, 8 figures

References in corpus (4)

• The Valley Hall Effect in MoS2 Transistors
• Integrated Circuits Based on Bilayer MoS2 Transistors
• Mechanisms of photoconductivity in atomically thin MoS2
• Effect of Point Defects on the Optical and Transport Properties of MoS2 and WS2

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• Electron-phonon interaction, excitations and ultrafast photoemission from doped monolayer MoS2
• Pump-induced terahertz conductivity response and peculiar bound state in Mn3Si2Te6
• Mid-Infrared Ultrafast Carrier Dynamics in Thin Film Black Phosphorus