Compact chromium oxide thin film resistors for use in nanoscale quantum circuits
arXiv:1407.8467 · doi:10.1063/1.4901933
Abstract
We report on the electrical characterisation of a series of thin chromium oxide films, grown by dc sputtering, to evaluate their suitability for use as on-chip resistors in nanoelectronics. By increasing the level of oxygen doping, the room-temperature sheet resistance of the chromium oxide films was varied from 28 to 32.6k. The variation in resistance with cooling to 4.2K in liquid helium was investigated; the sheet resistance at 4.2K varied with composition from 65 to above 20G. All of the films measured displayed ohmic behaviour at all measured temperatures. For on-chip devices for quantum phase-slip measurements using niobium-silicon nanowires, interfaces between niobium-silicon and chromium oxide are required. By characterising the interface contact resistance, we found that a gold intermediate layer is favourable: the specfic contact resistivity of chromium-oxide-to-gold interfaces was 0.15 mcm, much lower than the value for direct chromium-oxide to niobium-silicon interfaces, 65mcm. We conclude that these chromium oxide films are suitable for use in nanoscale circuits as high-value resistors, with resistivity tunable by oxygen content.
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