Ultra-high-ohmic microstripline resistors for Coulomb blockade devices

Abstract

In this paper, we report on the fabrication and the low-temperature characterization of extremely high-ohmic microstrip resistors made of a thin film of weakly oxidized titanium. Nearly linear voltage-current characteristics were measured at temperatures down to $T \sim \unit[20]{mK}$ for films with sheet resistivity up to as high as $\sim \unit[7]{kΩ}$, i.e. about an order of magnitude higher than our previous findings for weakly oxidized Cr. Our analysis indicates that such an improvement can help to create an advantageous high-impedance environment for different Coulomb blockade devices. Further properties of the Ti film addressed in this work show a promise of low-noise behavior of the resistors when applied in different realizations of the quantum standard of current.

8 pages 3 figures

References in corpus (2)

• One-dimensional conduction in Charge-Density Wave nanowires
• Quantum phase slip interference device based on superconducting nanowire

Cited by in corpus (3)

• Demonstration of dual Shapiro steps in small Josephson junctions
• On chip synchronization of Bloch oscillations in a strongly coupled pair of small Josephson junctions
• Compact chromium oxide thin film resistors for use in nanoscale quantum circuits