Calculation of the Electron Spin Relaxation Times in InSb and InAs by the Projection-Reduction Method

Abstract

The electron spin relaxation times in a system of electrons interacting with piezoelectric phonons mediated through spin-orbit interactions were calculated using the formula derived from the projection-reduction method. The results showed that the temperature and magnetic field dependence of the relaxation times in InSb and InAs were similar. The piezoelectric material constants obtained by a comparison with the reported experimental result were Ppe = 4.0 x 10^21 eV/m for InSb and Ppe = 6.7 x 10^21 eV/m for InAs. The relaxation of the electron spin can be explained by the Elliot-Yafet process at a high field limit.

References in corpus (2)

• Electronic measurement and control of spin transport in Silicon
• Electron spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach